rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u. s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 8 r f fm8202 2.4ghz to 2.5ghz 802.11b/g/n wifi front end module the rffm8202 provides a complete integrated solution in a single front end module (fem) for wifi 802.11b/g/n and bluetooth? systems. the ultra small form factor and integrated matching greatly reduces the number of external components and layout area in the customer application. this simplifies the total front end solution by reducing the bill of mat erials, system footprint, and manufacturability cost. the rffm8202 integrates a 2.4ghz to 2.5ghz power amplifier (pa), low noise amplifier (lna) with bypass mode, power detector coupler for improved accuracy, sp3t switch, and some filtering for harmonic re jection. the device is provided in 2.5mm x 2.5mm x 0.45mm 16 - pin qfn package. this module meets or exceeds the rf front end needs of ieee 802.11b/g/n wifi rf systems. tx pa_en nc vcc c_rx ant bt nc nc rx 3 1 lna_en vcc nc 12 c_bt 2 13 11 10 9 8 7 6 5 4 14 15 16 vcc pdet functional block diagram ordering information rffm8202sb standard 5 piece sample bag rf fm8202 sq standard 25 piece sample bag rf fm8202 sr standard 100 piece reel rf fm8202tr7 standard 2500 piece reel rf fm8202 pck - 410 fully assembled eval board w/ 5 - piece sample bag package: q fn, 16 - pin, 2.5mm x 2.5 mm x 0.45 features p out = 19dbm 11g ofdm 2.5% evm p out = 21dbm meeting 11b spec mask voltage range 3.0v to 4.8v input and output matched to 50 ?; high level of integration supports wide voltage supply range applications cellular handsets mobile devices tablets consumer electronics gaming netbooks/notebooks tv/monitors/video smart energy rffm8202
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 2 of 8 rffm8202 absolute maximum rat ings parameter rating unit dc supply voltage (no rf applied) 6 v dc supply current 500 ma operating temperature range - 40 to +85 c storage temperature - 40 to +150 c maximum tx input power into 50 w load for 11b/g/n (no damage) +10 dbm maximum rx input power for both lna_en mode and bypass mode (no damage) +10 dbm moisture sensitivity msl1 caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max operating range 2.412 2.484 ghz operating temperature - 40 25 + 85 oc power supply v cc 3.0 3.3 4.35 v recommended operating voltage range extended v cc 4.8 v functional with derated performance control voltage - h igh 2. 8 3.1 v cc v pa_en, c _ rx, c _ bt, lna_en . control voltage - l ow 0 0. 2 v transmit (tx - ant ) p out = 19dbm; t = 25 oc; v cc = 3.3v ; pa_en = h igh, c _rx = c_ bt = l ow; freq = 2.412ghz to 2.484ghz, measured with a standard ieee802.11g waveform, unless otherwise noted dynamic evm - nominal 2.5 3 % p out = 19dbm; t = 25 oc; v cc = 3.3v - 32 - 30.5 db dynamic evm 2.5 3 % p out = 16.5 dbm, t = - 40c to +85 c , v cc = 3.0 v to 4.8v - 32 - 30.5 db output power meeting spectral mask 21 22 dbm 11 mbps cck, +/ - 11mhz offset from carrier tx port return loss 8 10 db t = - 40c to +85 c , v cc = 3.0 v to 4.8v ant port return loss 10 12 db nominal gain 23 25 2 8 db t = 25oc, v cc = 3.3v gain 2 0 .5 25 2 9 db t = - 40c to +85 c , v cc = 3.0 v to 4.8v gain flatness - 20 mhz channel - 0.5 0.5 db gain flatness - 40 mhz channel - 0.75 0.75 db gain flatness - 100 mhz band - 1 1 db out of band rejection 4 7 dbc 2110mhz to 2170mhz, t = 25oc, v cc = 3.3v, frequency = 2.412ghz nominal operating current 200 240 ma p out = 19dbm; t = 25 oc; v cc = 3.3v operating current 200 230 ma p out = 16.5 dbm; t = - 40c to +85 c , v cc = 3.0 v to 4.8v quiescent current 135 200 ma t = - 40c to +85 c , v cc = 3.0 v to 4.8v pa_en current 30 50 a leakage current 1 10 a v cc = 4.8v, rf off
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 8 rffm8202 parameter specification unit condition min typ max transmit (tx - ant ) (continued) p out = 19dbm; t = 25 oc; v cc = 3.3v ; pa_en = h igh, c_rx = c_ bt = l ow; freq = 2.412ghz to 2.484ghz, measured with a standard ieee802.11g waveform, unless otherwise noted second harmonic - 23 - 1 5 dbm/mhz t = - 40c to +85 c , v cc = 3.0 v to 4.8v third harmonic - 50 - 35 dbm/mhz power detector voltage 0.1 0.15 0.2 v p out = 0dbm , t = - 40c to +85 c , v cc = 3.0 v to 4.8v power detector voltage 1.0 1.25 1.5 v p out = 22dbm , t = - 40c to +85 c , v cc = 3.0 v to 4.8v variation from 0 - 360 degree load pull - 1.5 1.5 db 3:1 vswr 2.4ghz receive parameters t = 25 oc; v cc = 3.3v, lna_en = h igh, c_rx = h igh, c_bt = low, pa_en = low compliance ieee802.11b/g/n, fcc cfg 15.247,.205,.209, en, and jdec frequency range 2.412 2.484 ghz lna voltage supply 3.0 3.3 4.8 v lna v dd tied to vbatt at all times lna current supply 8 1 2 ma t = 25c 8 1 4 ma t = - 40c to +85 c , v cc = 3.0 v to 4.8v lna_en current 60 100 a gain receive 10 13 15 db lna on; v cc = 3.3v; t = 25c 8 13 16 db t = - 40c to +85 c , v cc = 3.0 v to 4.8v bypass mode - 14 - 10 - 7.5 db t = 25c , lna low, c_rx = h igh, c_bt = low, pa_en = low - 14 .5 - 10 - 7 db t = - 40c to +85 c , v cc = 3.0 v to 4.8v, lna_en = low, c_rx = h igh, c_bt = low, pa_en = low noise figure 2 3 db 4 t = - 40c to +85 c , v cc = 3.0 v to 4.8v input ip3 - 7 2 dbm t = - 40c to +85 c , v cc = 3.0 v to 4.8v input p1db - 12 - 5 dbm output return loss 8.5 10 db input return loss 4 5 db bluetooth tx/rx t = 25oc; v cc = 3.3v, lna_en = low, c_rx = low, c_bt = high , pa_en = low input / output power 20 dbm t = - 40c to +85 c , v cc = 3.0 v to 4.8v insertion loss 0.5 1.2 db bt port return loss 10 18 db ant port return loss 10 18 db isolation tx to rx 29 35 db in tx mode (measured from ant to rx port) bt to rx 24 27 db in bt mode (measured from ant to rx port) tx to bt 9 18 db in tx mode (measured from ant to bt port) rx to bt 17 25 db in rx high gain mode (measured from ant to bt port) rx to bt (bypass mode) 17 20 db in rx bypass mode (measured from ant to bt port)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 8 rffm8202 parameter specification unit condition min typ max general specifications switch control current ? high each line 5 60 a switch control current - low each line 0.5 10 a switching speed 100 ns esd hbm 1000 v eia/jesd22 - a114 esd cdm 1000 v jesd22 - c101 pa turn - on time 200 500 ns 10% to 90% switch control logic truth table operating mode pa_en lna_en c_rx c_bt standby low low low low 802.11b/g/n tx high low low low 802.11b/g/n rx gain low high high low 802.11b/g/n rx bypass low low high low bt rx/tx low low low high note: ? pa_en and tx switch control are tied together internally ? high = 2. 8 v to v cc , low = 0v to 0. 2 v
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 8 rffm8202 evaluation board schematic
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 8 rffm8202 pin out tx pa _ en nc vcc c _ rx ant bt nc nc rx 3 1 lna _ en vcc nc 12 c _ bt 2 13 11 10 9 8 7 6 5 4 14 15 16 vcc pdet package outline and branding drawing
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 8 rffm8202 pcb patterns
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 710 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro d evices, inc. ("rfmd") for its use, nor for any infringement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change c omponent circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 8 rffm8202 pin names and descriptions pin name description 1 pdet power detector voltage for the tx path. may need external series r and/or shunt c to adjust voltage level and to filter rf noise 2 nc* no connect. this pin is not connected internally and can be left floating or connected to ground. 3 vcc supply voltage for the output stage of the pa. see applications schematic for biasing and bypassing components. 4 vcc supply voltage for the first stage of the pa. see applications schematic for biasing and bypassing components. 5 tx rf input port for the 802.11b /g/n pa. input is matched to 50 ? . an external dc block is required. 6 pa_en bias voltae for the pa. this pin also controls the tx switch of the sp3t. see truth table for proper settings. 7 nc* no connect. this pin is not connected internally and can be left floating or connected to ground. 8 rx rf output port for the 802.11b /g/n lna. port is matched to 50 ? . an external dc block is required. 9 lna_en control voltage for the lna. when this pin is set to a low logic state, the bypass mode is enabled. 10 vcc supply voltage for the lna. see applications schematic for biasing and bypassing components. 11 bt rf bidirectional port for blu etooth?. input is matched to 50 ? . a n external dc block is required. 12 nc* no connect. this pin is not connected internally and can be left floating or connected to ground. 13 c_bt bluetooth? switch control pin. see truth table for proper level. 14 c_rx receive switch control pin. see switch truth table for proper level. 15 nc* no connect. this pin is not connected internally and can be left floating or connected to ground. 16 ant rf bidirecti onal antenna port matched to 50 ? . an external dc block is required. pkg base gnd ground connection. the backside of the package should be connected to the ground plane through a short path, i.e., pcb vias under the device are recommended.
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